Product Summary

The MRF377 is a RF Power Field-Effect Transistor. MRF377 is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of the MRF377 make it ideal for large-signal, common source amplifier applications in 32 volt digital television transmitter equipment.

Parametrics

MRF377 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: -0.5, +15 Vdc; (3)Drain Current - Continuous ID: 17 Adc; (4)Total Device Dissipation @ TC = 25℃, PD: 486W; Derate above 25℃: 2.78W/℃; (5)Storage Temperature Range, Tstg: -65 to +150℃; (6)Operating Junction Temperature, TJ: 200℃.

Features

MRF377 features: (1)Typical Broadband DVBT OFDM Performance @ 470-860 MHz, 32 Volts, IDQ = 2.0 A, 8K Mode, 64 QAM; (2)Output Power . 45 Watts Avg; (3)Power Gain ≥ 16.7 dB; (4)Efficiency ≥ 21%; (5)ACPR ≤ -58 dBc; (6)Typical Broadband ATSC 8VSB Performance @ 470-860 MHz, 32 Volts, IDQ = 2.0 A; (7)Output Power: 80 Watts Avg; (8)Power Gain ≥ 16.5 dB; (9)Efficiency ≥ 27.5%; (10)IMD ≤ -31.3 dBc; (11)Internally Input and Output Matched for Ease of Use; (12)Integrated ESD Protection; (13)Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45Watts DVBT OFDM Output Power; (14)Excellent Thermal Stability; (15)Characterized with Series Equivalent Large-Signal Impedance Parameters; (16)Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

Diagrams

MRF377 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF377
MRF377

Other


Data Sheet

Negotiable 
MRF377H
MRF377H

Other


Data Sheet

Negotiable 
MRF377HR3
MRF377HR3

Freescale Semiconductor

Transistors RF MOSFET Power 250W 860MHZ 32V

Data Sheet

Negotiable 
MRF377HR5
MRF377HR5

Freescale Semiconductor

Transistors RF MOSFET Power 250W 860MHZ 32V

Data Sheet

Negotiable 
MRF377R3
MRF377R3

Other


Data Sheet

Negotiable 
MRF377R5
MRF377R5

Other


Data Sheet

Negotiable