Product Summary

The K6X1008C20-BF55 is a 128Kx8 bit Low Power CMOS Static RAM. It is fabricated by SAMSUNG’ s advanced CMOS process technology. The K6X1008C20-BF55 supports verious operating temperature ranges and has various pack-age types for user flexibility of system design. The K6X1008C20-BF55 also supports low data retention voltage for battery back-up operation with low data retention current.

Parametrics

K6X1008C20-BF55 absolute maximum ratings: (1)Voltage on any pin relative to Vss:-0.5 to VCC+0.5V(Max. 7.0V) V; (2)Voltage on Vcc supply relative to Vss:-0.3 to 7.0 V; (3)Power Dissipation:1.0 W; (4)Storage temperature:-65 to 150 ℃; (5)Operating temperature:0 to 70 ℃.

Features

K6X1008C20-BF55 features: (1)Process Technology: Full CMOS; (2)Organization: 128K x 8 ; (3)Power Supply Voltage: 4.5~5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 32-DIP-600, 32-SOP-525, 32-SOP-525, 32-TSOP1-0820F.

Diagrams

K6X1008C20-BF55 block diagram

K6X1008C2D-B
K6X1008C2D-B

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K6X1008C2D-BF55
K6X1008C2D-BF55

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K6X1008C2D-F
K6X1008C2D-F

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K6X1008C2D-Q
K6X1008C2D-Q

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K6X1008T2D-B
K6X1008T2D-B

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K6X1008T2D-F
K6X1008T2D-F

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