(China (Mainland))
Product Summary
The K6R1016V1D-UI10 is a 256Kx4 Bit (with OE) High-Speed CMOS Static RAM. It uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The K6R1016V1D-UI10 is fabricated using SAMSUNG’s advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016V1D-UI10 is packaged in a 400 mil 32-pin plastic SOJ.
Parametrics
K6R1016V1D-UI10 absolute maximum ratings: (1)Voltage on Any Pin Relative to VSS VIN, VOUT: -0.5 to Vcc+0.5V V; (2)Voltage on VCC Supply Relative to VSS VCC: -0.5 to 7.0 V; (3)Power Dissipation Pd: 1 W; (4)Storage Temperature TSTG: -65 to 150 ℃; (5)Operating Temperature Commercial TA: 0 to 70 ℃; Industrial TA: -40 to 85 ℃.
Features
K6R1016V1D-UI10 features: (1)Fast Access Time 10ns(Max.); (2)Power Dissipation Standby (TTL): 20mA(Max.); (CMOS): 5mA(Max.); Operating K6R1004C1D-10: 65mA(Max.); (3)Single 5.0V±10% Power Supply; (4)TTL Compatible Inputs and Outputs; (5)I/O Compatible with 3.3V Device; (6)Fully Static Operation - No Clock or Refresh required; (7)Three State Outputs; (8)Center Power/Ground Pin Configuration; (9)Standard Pin Configuration: K6R1004C1C-J: 32-SOJ-400; K6R1004C1C-K: 32-SOJ-400(Lead-Free); (10)Operating in Commercial and Industrial Temperature range.
Diagrams
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 K6R1016V1D |
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K6R1016V1C-TC15 |
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K6R1016V1C-P |
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K6R1016V1C-L |
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K6R1016V1C-I |
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Negotiable |
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K6R1016V1C-C10 |
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Negotiable |
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