Product Summary

The 4C1M16C3 is an FPM DRAM.

Parametrics

4C1M16C3 absolute maximum ratings: (1)Voltage on VCC Pin Relative to VSS: -1V to +4.6V; (2)Voltage on NC, Inputs or I/O Pins Relative to VSS: -1V to +5.5V; (3)Operating Temperature: 0℃ to +70℃; (4)Storage Temperature (plastic): -55℃ to +150℃; (5)Power Dissipation: 1W.

Features

4C1M16C3 features: (1)JEDEC- and industry-standard x16 timing, functions, pinouts, and packages; (2)High-performance, low-power CMOS silicon-gate process; (3)Single power supply (+3.3V .3V or 5V .5V); (4)All inputs, outputs and clocks are TTL-compatible; (5)Refresh modes: RAS#-ONLY, CAS#-BEFORE-RAS#(CBR) and HIDDEN; (6)Optional self refresh (S) for low-power data retention; (7)BYTE WRITE and BYTE READ access cycles; (8)1,024-cycle refresh (10 row, 10 column addresses); (9)FAST-PAGE-MODE (FPM) access.

Diagrams

4C1M16C3 block diagram