(China (Mainland))
Product Summary
The SUM110N06-3M4L-E3 is a N-Channel 60-V (D-S) 175℃ MOSFET.
Parametrics
SUM110N06-3M4L-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 60V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current (TJ = 175 ℃) ID: 110A; (4)Pulsed Drain Current IDM: 440A; (5)Avalanche Current, Single Pulse IAS: 75; (6)Avalanche Energy, Single Pulse L = 0.1 mH EAS: 280 mJ; (7)Maximum Power Dissipation PD: 375W at TC = 25 ℃; (8)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 175 ℃.
Features
SUM110N06-3M4L-E3 features: (1)TrenchFET Power MOSFET; (2)100% Rg Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SUM110N06-3M4L-E3 |
Vishay/Siliconix |
MOSFET 60V 110A 375W 3.4mohm @ 10V |
Data Sheet |
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SUM110N02-03P |
Other |
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Data Sheet |
Negotiable |
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SUM110N03-03 |
Other |
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Data Sheet |
Negotiable |
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SUM110N03-03P |
Other |
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Data Sheet |
Negotiable |
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SUM110N03-03P-E3 |
Vishay/Siliconix |
MOSFET 30V 110A 375W 2.6mohm @ 10V |
Data Sheet |
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SUM110N03-04P |
Other |
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Data Sheet |
Negotiable |
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SUM110N03-04P-E3 |
Vishay/Siliconix |
MOSFET 30V 110A 120W |
Data Sheet |
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